PRODUCTS
- Home
- Products
- Measurement of Quantum Efficiency in Silicon Photonics
- Microscale Photodiode Intensity Response Testing Platform
Measurement of Quantum Efficiency in Silicon Photonics
Microscale Photodiode Intensity Response Testing Platform
- Features
- Measurement of Quantum Efficiency in Silicon Photonics
Description
Machine Features
- Supports multiple wavelength light sources, suitable for photosensitivity testing of 60μm microchips.
- Up to 8 wavelength options (including 1550nm, 1310nm, etc.), with wavelength upgrade services available.
- Equipped with manual and automatic focusing functions, with synchronized camera monitoring during measurements.
- Sample temperature is controllable, ranging from room temperature to 90°C.
iboson Technology
Professional Solutions for Micron-Scale Photodiode Response Testing
Machine Specifications
- Wavelength Options: 1550nm, 1310nm, 940nm, 850nm, 650nm, etc., supporting up to 8 wavelengths.
- Light Source Power: 10~20mW, adjustable in 0.1mW increments across all wavelengths.
- Sample Dimensions: 250μm area, 60μm light-sensitive region, thickness from 100~350μm.
- Supported Wafer Sizes: 2~4 inches, or single-chip samples.
Actual Machine Photos
Figure 1: Complete system design, including external packaging and modular internal structure.
Internal Structure
Figure 2: Core internal modules, including laser, sample stage, and probe controller.
Sample Test Data
Figure 3: Linear relationship between optical power and chip output current, with the slope reflecting measurement efficiency.
Optical Path Diagram
Figure 4: Comprehensive optical path design, covering multi-wavelength laser and sample testing processes.
Software Features
- Supports output of optical power (mW), chip output current (mA), and other data.
- Multi-point testing capability with programmable power ranges and automatic analysis of slope, current points, and power points.
- Data results can be saved individually and exported in formatted files for further analysis.