Integrated Wafer and Thin Film Measurement Solutions

TTV ・ Warpage ・ Multi-layer Thickness ・ 3D Topography ・ Roughness

From nm to mm: A One-Stop Measurement Solution

About iBoson: From Sensors to Turnkey Systems

iBoson Technology specializes in optical measurement system integration, combining various interferometry, spectroscopy, and ellipsometry technologies. We customize measurement solutions based on customer material and process requirements, ready for direct deployment in both R&D and production lines.

Technology Selection

Select the most suitable technology combination based on material, thickness, and precision requirements.

System Integration

Seamless integration of measurement probes, stages, fixtures, and software.

Algorithm & Analysis

TTV / Warp / Thickness Mapping, and SPC reporting.

Local Service

Sample evaluation, acceptance testing, training, and warranty support.

Industry Challenges: Thinner Wafers and Complex Structures Elevate Measurement Difficulty

Wafer Level

  • Thinning down to the 20 µm level causes larger warpage.
  • LN / LT piezoelectric wafer heterogeneous bonding (glass, silicon, sapphire).
  • Opaque metal coatings prevent single-sided optical penetration.
  • High-doped Si causes strong absorption and NIR signal attenuation.

Thin Film Level

  • Simultaneous determination of n, k, and thickness at the nanoscale.
  • Layer-by-layer resolution required for multi-layer stacks.
  • Micro-area (≤ 30 µm) measurement for patterned wafers.
  • Full-wafer mapping for thickness uniformity.

Production Line Level

  • Measurement speed must match process Takt time.
  • High repeatability and long-term stability.
  • Non-contact and non-destructive to samples.
  • Data must integrate seamlessly with SPC / MES.

Nine Core Measurement Technology Codes

Code Technology Name Key Measurement Items Application Features
T1 IR White Light Interferometry Wafer Thickness・TTV Wafer Geometry
T2 Multi-peak Interferometric Displacement Multi-layer Thickness＋Warpage Thick Film / Si / Haze
T3 Broadband Spectral Interferometry Si Penetration・Coated Films Thin Film Optics
T4 High-penetration Spectral Interferometry Haze Films・EMC・Thick Films Thick Film / Si / Haze
T5 Reflectance Spectroscopy Thin Film d・n・k・Map Thin Film Optics
T6 Spectroscopic Ellipsometry Ultra-thin Films・Precise n/k Thin Film Optics
T7 Monochromatic Light Interferometry Surface Roughness Surface Topography
T8 Line Confocal 3D Scanning 3D Topography・Bumps・Steps Surface Topography
T9 Dual-probe Caliper Measurement Opaque Wafer Thickness Opaque Materials

Selection Guide: Three Steps to Determine Measurement Technology

  1. STEP 1: What to measure? Thickness / TTV, Warpage; Multi-layer thickness; Film thickness & n, k; 3D topography / Roughness.
  2. STEP 2: Material optical properties? Transparent (Glass, LN, Sapphire); Si (Requires SWIR IR band); Haze / EMC (High scattering); Metal coatings (Opaque).
  3. STEP 3: Thickness of each layer? ≥ 10 µm → T2; 0.3–10 µm → T3; 10 nm–several µm → T5; < 100 nm → T6.

Example: LN 20 µm bonded to glass, measuring TTV＋Warpage → Transparent → ≥ 10 µm per layer → T2 Multi-peak Interferometric Displacement, completed with a single probe.

By Material Type: Technology Overview

Material Optical Properties Recommended Tech Notes
Glass / Quartz Transparent T2・T1・T3・T5 —
Sapphire Transparent T2・T1 —
LN / LT Piezo Wafers Transparent T2・T1 X / Y-cut double refraction, sample evaluation recommended.
Si Wafers / Thinned Wafers Opaque at 840 nm T3 (SWIR 40–775 µm, penetrates backing tape)・T1 (1100 nm) T1 is used for high-doped Si.
SiO₂ / SiN Dielectric Films Transparent T5・T6 Prioritize T6 for < 100 nm.
Photoresist / PI / Organic Films Transparent to Translucent T3・T5・T6 Requires optical model establishment.
Haze Films / EMC / Composite Films High scattering / Absorption T4 (Penetrates ~1 mm EMC) Max total thickness ≤ 3 mm, resolves up to 3 layers.
Metal Coatings / Opaque Opaque T9 (Thickness)・T8 / T7 (Surface) Requires standard wafer for probe gap calibration.
Bumps / Microstructures 3D Structure T8 (3D Topography)・T3 Microscopic (Thickness) —

By Measurement Item: Technology Mapping

Measurement Item Wafer Thickness / TTV Warpage / Bow / Warp Multi-layer Thickness Thickness＋Refractive Index n, k Haze Film / EMC Thickness 3D Topography / Bumps / Steps Surface Roughness Ra / Rz
T1 IR White Light Interferometry Primary Primary Conditional        
T2 Multi-peak Interferometric Displacement Primary Primary Primary        
T3 Broadband Spectral Interferometry Primary Conditional Primary Primary      
T4 High-penetration Spectral Interferometry Conditional Conditional Primary   Primary    
T5 Reflectance Spectroscopy     Primary Primary      
T6 Spectroscopic Ellipsometry     Conditional Primary      
T7 Monochromatic Light Interferometry           Conditional Primary
T8 Line Confocal 3D Scanning   Conditional       Primary Conditional
T9 Dual-probe Caliper Measurement Primary            

Note: For transparent wafers requiring simultaneous thickness＋warpage measurement → T2; For haze films / EMC → T4

Technical Specifications Quick Reference

Specifications vary depending on material, refractive index, and specific models; subject to actual sample evaluation results.

Technology Primary Application Measurement Range Accuracy / Resolution Spot Size / FOV Speed
T1 IR White Light Interferometry Wafer Thickness / TTV 1 µm–1.4 mm (Glass); Si 50 µm–1.05 mm Resolution < 1 nm; Linearity ±0.1 µm Point measurement 6 kHz
T2 Multi-peak Interferometric Displacement Multi-layer Thickness＋Warpage Z 2.1 mm; 10 µm–1.3 mm per layer, ≤ 13 layers Resolution 30 pm–1 nm; Linearity ±10–50 nm 10 µm 6 kHz
T3 Broadband Spectral Interferometry Si Thickness / Coated Films Si 40–775 µm; Film 0.3–200 µm CV < 0.1%; Resolution 0.001–0.01 µm 10 µm–1 mm < 1 s / point
T4 High-penetration Spectral Interferometry Haze / EMC / Thick Films 50 µm–3 mm (n=2), up to 3 layers Resolution 0.1 µm; Repeatability ≤ 0.5 µm 2 mm (WD 90 mm) 1 s / point
T5 Reflectance Spectroscopy Thickness, n, k, Map 10 nm–350 µm (Depending on band) Accuracy < 2 nm or 0.2%; Stability 0.1 nm 10–30 µm (Microscopic) 12-inch Auto Map
T6 Spectroscopic Ellipsometry Ultra-thin Films, n, k nm-level Films Δ, Ψ < ±0.3%; Thickness / n, k < ±0.3% Incident angle 45–90° —
T7 Monochromatic Light Interferometry Surface Roughness Height 1–160 nm Ra Repeatability ±0.5 nm 1.6 × 1.3 mm 2 s
T8 Line Confocal 3D Scanning 3D Topography / Bumps Line length 7 mm (2,624 pts); Z 2.1 mm Z Resolution 200 nm; Lateral 2.7 µm Line profile 10 kHz profile
T9 Dual-probe Caliper Measurement Opaque Wafer Thickness Depends on probe configuration Depends on probe; Standard wafer calib. 10 µm 6 kHz

Integrated Measurement Workflow & System Architecture
 


                  
 
  • iBoson Measurement Software: Recipe management, auto-patterning (polar/rectangular/linear), Map visualization, SPC, reporting, MES interface.
  • Measurement Probes (Optional): T1–T9 interferometry, spectroscopy, ellipsometry, line confocal, and dual-probe configurations.
  • Motion & Positioning: XY / R-θ / Z stages, auto-focus, vision alignment, granite base.
  • Stages & Fixtures: Vacuum chucks, 3-point support, 4–12 inch wafer fixtures, dual-probe calipers.

The same platform can be equipped with multiple probes as needed, sharing identical recipes and data formats for both R&D validation and mass production deployment.

Partnership Process: From Sample Evaluation to Mass Production, iBoson Supports You Every Step of the Way

STEP 1 Requirements Interview
Materials, dimensions, specs, and takt time.
STEP 2 Sample Evaluation
Empirical testing to verify technical feasibility.
STEP 3 Feasibility Report
Measurement data and solution recommendations.
STEP 4 Custom Design
Quotation, mechanical, and software planning.
STEP 5 Acceptance & Training
Installation, MSA, training, and warranty.

Make Measurement Your Process Competitive Advantage

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We welcome you to provide samples for empirical evaluation by iBoson. Please provide: materials and structures, wafer sizes, thickness ranges, target specifications, measurement takt time, and application scenarios.

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